摘要
我们应用光声技术,研究a-Si:H/a-SiN_x:H超晶格薄膜中载流子的非辐射复合和量子尺寸效应,发现载流子的非辐射复合与超晶格薄膜中的缺阱有关;超晶格薄膜的光学能隙随着势阱宽度减小而增大。
Whem the nonradiative recombination of carriers and the quantum size effect in thea-Si: H/a-SiN_x: H superlattice films have are studied by photoacoustic techonlogy, it is discovered that the nonradiative recombination of carriers is related to the defects in the superlattice film and the optical gap of the film increases with the decrease of width of the well.
出处
《南京大学学报（自然科学版）》
CAS
CSCD
1990年第1期32-38,共7页
Journal of Nanjing University（Natural Science）
关键词
半导体
超晶格
薄膜
光声谱
amorphous semiconductor superlattice
photoacoustic spectrum
