摘要
本文报道了反应溅射法制备的a-Si:H/a-Ge:H超晶格结构特性.小角度X射线衍射测量和透射电子显微镜观察表明:超晶格层厚均匀、层间平行、界面处组分突变、周期性良好;喇曼散射、光吸收和红外透射表明:在超晶格中并不存在由于超晶格结构引起的界面结构无序,界面无H富集现象.
a-Si:H/a-Ge:H superlattices have been fabricated by reactive-sputtering method and theirstructral properties were studied.Transmission electron micrography (TEM) and small angleX-ray diffraction measurements demonstrated that the superlattice layers are parallel and uni-form with atomically sharp interfaces and good periodicity.From Raman,IR and optical ab-sorption spectrum measurements, we found no indication of excess structural disorder asso-ciated with the indication and no evidence for excess H at the a-Si:H/a-Ge:H nterface.
关键词
非晶态半导体
反应溅射
超晶格
Superlattices
Optical Properties
Superlattices
Structural Analysis
