摘要
报导了采用平面工艺制作a-Si∶H/C-Si HBT的基本工艺和测试结果。在Si-HBT的研制中,取得了H_(FE)=60、∫_r=530MHz的良好结果。
The basic technologies and measuring results of a-Si: H/C-Si-heterojuuction bipolar transistor(HBT) fabricated by planar processes are reported. In the development of SiHBT, the good results of H_(FE)=60、∫_r=530 MHz are obtained.
出处
《电子科技大学学报》
EI
CAS
CSCD
北大核心
1992年第6期664-667,共4页
Journal of University of Electronic Science and Technology of China
关键词
平面工艺
双极晶体管
异质结
hydrogenation amorphous silicon heterojunction bipolar transistor
wide bandgap emitter
heterojunction interface
Plasma etching
planar process.
