摘要
建立一套用于ＭＯＳ结构辐照陷阱消长规律研究的快速Ｉ－Ｖ在线测试系统，用此系统可进行自动加偏和Ｉｄｓ－Ｖｇｓ亚阀曲线测试，从面可快速定性定量获得辐照和退火环境中氧化物电荷和Ｓｉ／ＳｉＯ２界面随辐照剂量，时间，偏置等的依赖关系，快速Ｉ－Ｖ测试系统最高可以达到１次／秒的Ｉｄｓ－Ｖｇｓ测量速度，用此系统研究了ＰＭＯＳＦＥＴ５×１０＾３Ｇｙ（Ｓｉ）总剂量辐照后１００℃恒温退火下，辐照陷阱的消长规律和机制。
We have designed a fast I-V in situ measurement system used forthe study of radiation traps formation and anneal in MOS structure. This systemcan set the gate biases automatically and measure the Ids-Vgs threshold curves,determine quantitatively and qualitatively the dependences of oxide charges and Si/SiO_2 interface states on radiation doses, time and gate biases. The fastest measurement speed is one time per second. The generation and anneal characteristics of radiation traps for PMOSFET in 100 ℃ annealing after 5 × 10~3 Gy(Si)ionizing radiationhave been investigated.
出处
《固体电子学研究与进展》
CAS
CSCD
北大核心
1998年第3期329-333,共5页
Research & Progress of SSE
关键词
MOS
辐照
退火
氧化物电荷
界面态
快速I-V技术
MOS Ionizing Radiation Anneal Oxide Charges Interface States Quick Speed I-V Techniques
