摘要
介绍了CMOS运算放大器经60Coγ辐照及辐照后在不同温度下随时间变化的实验结果,并通过对差分对单管特性和电路内部各单元电路损伤退化的分析,探讨了引起电路"后损伤"效应的原因。结果表明,由辐照感生的氧化物电荷和界面态的消长及差分对管的不匹配,是造成电路继续损伤劣化的根本原因。对于CMOS运算放大器电路,在抑制辐照感生的氧化物电荷和界面态增长的同时,改善电路间的对称性和匹配性,对提高电路的抗辐射能力是至关重要的。
Radiation effects and annealing characteristics of 60Co γ irradiated CMOS amplifiers at different temperatures were studied, and the mechanism of post damage effects of total dose radiation were investigated by analyzing and comparing the radiation characteristics of the differential input transistors and subsidiary circuits It has been shown that key factors that cause the post damage effects are the mismatch of the differential input transistors and the compounding or continued growing of oxide charges and interface states after radiation So, to enhance the radiation hardness of CMOS amplifiers, it is very important to improve the symmetry and the matching capability of the circuits while restraining the radiation induced growth of oxide charges and interface states
出处
《微电子学》
CAS
CSCD
北大核心
2003年第2期102-104,117,共4页
Microelectronics
关键词
CMOS线性电路
运算放大器
电离辐照
后损伤效应
CMOS linear IC
Operational amplifier
Radiation hardening
Total dose radiation
Post damage effect
