摘要
介绍了在相同工艺条件下 ,N沟和 P沟输入两种不同结构 CMOS运算放大器电路的电离辐照响应规律及各子电路对电特性的影响情况 .结果表明 :由辐照感生的氧化物电荷引起的N沟镜像负载的不对称是导致 P沟输入运放电特性衰降的主要机制 ;而由氧化物电荷和界面态引起的 N沟差分对的漏电增大则是造成
The total dose radiation effects of CMOS operational amplifiers (op\|am ps)with N and P channel transistors inputs have been studied. Influences contributed by some sub sidiary circuits in irradiation on the op\|amps' characteristics have also been investigated. It i s shown that the main mechanism of the op\|amps with P\|channel transistor input,which makes the performance degrade is the unbalance of the N\|channel transistors' mirror\|load. On the other hand, the in crease of the leakage current of differential pair is the most important reason for the deter ioration of the op\|amps behavior with N\|channel transistor input.
关键词
CMOS
运算放大器
电离辐射效应
氧化物电存
CMOS operational amplifier
total dose radiation
oxide charges
interface states
