摘要
阐述了高分辨二次电子成分衬度像的成像原理、成像条件和实验方法，介绍了一种新的试样制备方法，讨论了各种制样方法的特点。以多层Ｐ＋Ｓｉ１－ｘＧｅｘ／ｐＳｉ异质结内光发射红外探测器为例，介绍了二次电子成分衬度像观察技术在异质结半导体材料和器件微结构研究中的应用。将这种技术与通常的透射电子衍射衬度方法进行了比较，讨论了它在异质结半导体材料和器件中的应用前景。
The principle, imaging conditions and the experimental method for obtaining a high resolution composition contrast in secondary electron image were described. A new specimen preparation method was introduced and the methods of the preparing specimens for secondary electron composition contrast observation were discussed. By using multilayer P + Si 1- x Ge x /p Si heterojunction internal photoemission infrared detector as an example, the applications of secondary electron composition contrast imaging in microstructure studies on heterojunction semiconduciting materials and devices were stated. The characteristics of the image were compared with the ordinary transmission electron diffraction contrast image. The prospects of applications of the imaging method in heterojunction semiconducting materials and divices were also discussed.
出处
《稀有金属》
EI
CAS
CSCD
北大核心
1998年第6期401-405,共5页
Chinese Journal of Rare Metals
基金
国家自然科学基金
关键词
二次电子
成分衬度像
半导体
电子显微术
微结构
Secondary electron composition contrast image
Heterojunction semiconducting materials and devices
Electron microscopy
Microstructure
