摘要
本文报导了半导体InP材料〔001〕带轴的高分辨结构象主要实验结果。采用400kV电子束,欠焦量为大约650A,同时In及P的结构象的最佳厚度约为260A。当厚度减缩到150A左右,只剩下P的原子象。当厚度增加到370A,只剩有In的原子象。实验得到的高分辨结构象和计算机模拟象是基本一致。当试样发生弯曲时,入射束与〔001〕带轴之间的夹角是0.18度。高分辨结构象代表In原子和P原子的亮点联接在一起。计算机模拟象证实了这一实验结果。
This paper reports some experimentaI results of HREM study on single crystal InP along 001 zone axis. Using 400KV electrons. with defocus value about 650A. the optimum condition for structure imaging showing both In and P atoms is found to be about 260A. Decreasing the specimen thickness to about 150A. only atomic images of P remains; increasin the specimen thickness to about 370A. only that of In remains. These experimental results are in good agree-ment with computer simulation. It was also observed that for bent crystal deviates from 001 axis. the bright spots. corresponding to In and P atomic columns in high resolution structure image. will be elongated at deviati on angle equals to 0. 18 degrees. The two bright spots are connected together along the direction of 110 zone axis. This phenomenon is also comfirmed by computer Simulation.
出处
《电子显微学报》
CAS
CSCD
1989年第3期31-35,共5页
Journal of Chinese Electron Microscopy Society
