摘要
研究了ＰＥＣＶＤ生长ｎｃＳｉ∶Ｈ膜过程中ＳｉＨ４气体稀释比、平衡反应气压、衬底温度、等离子体射频功率和直流负偏压等各种工艺参数对生成膜层质量的影响。
The effects of various technique parameters, such as dilute ratio of SiH4 gas, equilibrium pressure of reaction gas, substrate temperature, plasma RF power and DC negtive bias voltage, on the quality of ncSi∶H films grown by PECVD were discussed. The new approach used to improve the quality of the thin films was discussed.
出处
《稀有金属》
EI
CAS
CSCD
北大核心
1998年第4期277-280,共4页
Chinese Journal of Rare Metals
基金
河北省自然科学基金
