摘要
nc-Si∶H膜具有显著不同于α-Si∶H与μc-Si∶H膜的新颖结构与物性。从热力学反应的基元过程出发，定性地分析了本征nc-Si∶H与掺磷nc-Si(P)∶H膜的沉积机理。
The nc-Si: H films have been grown by plasme enhanced chemical vapor deposition. Their structures and properties were found to be noticeably different from that of both α-Si: H and μc-Si: H films. In this paper, the growth mechanism of intrinsic nc-Si: H and the phosphorous doped nc-Si: H films was discussed on the basis of elementary processes in thermodynamics reactions. Possible approaches to improve the film quality were also proposed.
出处
《真空科学与技术》
CSCD
北大核心
1998年第4期283-288,共6页
Vacuum Science and Technology
基金
河北省自然科学基金!595076
关键词
PEVCD
nc-Si:H膜
沉积机理
退火处理
自组织生长
nc-Si: H film, Deposition mechanism, Annealing, Self-organizaion growth, Layer-by-laye deposition
