摘要
摸索了利用PECVD方法制备嵌埋于硅槽中Si反Opal结构的工艺条件,探索性研究了射频功率、气体流量、反应室压力、沉积时间和Opal基底状态对填充效果的影响。结果显示射频功率越小,流量越低,反应室压力越大,则反应速率越低,Opal结构内外填充越均匀。同时,在[SiHm]自由基扩散通道不被堵塞的前提下,沉积时间越长,Opal结构排列越规整,则整体填充越致密,越有利于反Opal结构的形成。
A method to prepare the Si inverse Opal structure embedded in Si flute by PECVD was explored. The results indicate that low RF power, low flow rate or high pressure in reaction chamber can decease the reaction rate, which is helpful to the sediment to be evenly. When the reaction rate is low enough and the channels for transfer of [ SiHm] is not plugged up, compact inverse Opal can be obtained with prolonging sediment time. The orderly Opal structure is also important in this method.
出处
《功能材料与器件学报》
EI
CAS
CSCD
北大核心
2006年第6期537-540,共4页
Journal of Functional Materials and Devices
