摘要
用Ｓｏｌ－Ｇｅｌ法自制了ＫＴＮ陶瓷，以之为靶材，首次在单晶硅上用ＰＬＤ技术沉积了ＫＴＮ薄膜，并对所制备的薄膜进行了ＸＲＤ和ＳＥＭ分析及Ｐ－Ｅ电滞回线观察．观察分析结果表明：薄膜的主晶相为钙钛矿相（约９８％），且沿（１００）方向取向生长；薄膜表面光滑、无裂纹、致密性好；薄膜具有良好的铁电性质．同时还分析了Ｓｉ（１００）单晶衬底上钙钛矿相的形成机理；并讨论了衬底温度Ｔｓ和氧气氛等因素对成膜的影响．
KTN ceramics are prepared by Sol Gel using these ceramics as a target, and some highly oriented KTN thin films prepared by PLD on P Si (1 0 0) substrate. XRD, SEM and P E analytic results indicate that KTN being perovskite structure with (1 0 0) orientation is the major phase (>98%). The surface of the films is smooth, homogeneous, crack free and dense. The films appear typical hysteresis loops. The forming mechanism of KTN thin films on P Si (1 0 0) substrate and the effects of the substrate temperature (T s), oxygen and the quality of the target on the structure of the thin films are discussed.
出处
《华中理工大学学报》
CSCD
北大核心
1998年第7期7-9,共3页
Journal of Huazhong University of Science and Technology
基金
激光技术国家重点实验室资助项目
