摘要
用PLD技术结合后期退火,在透明石英单晶(100)上制备了高取向的纯钙钛矿相KTN薄膜.对薄膜的光学、电学性能分析表明,薄膜铁电居里温度为15℃,矫顽场7.32kV/cm,剩余极化强度9.25μC/cm2,折射率在波长1.2μm处为1.776,厚度968nm,沉积速率约为0.027nm/脉冲.I-V特性表明,低电场强度下,I-V服从欧姆定律,高电场强度下,I-V服从平方关系,可用空间电荷限制电流(SCLC)模型解释.薄膜漏电流在0-5V内低于250μA/mm2,具有良好的电学性能,C-F测试表明,低频电容色散大,高频色散小,在室温10kHz时介电常数为12600.介电损耗tanδ为0.04.
Highly oriented KTN thin films were produced on the transparent single crystal quartz （100） by the pulsed laser deposition （PLD）. XRD analysis indicates that perovskite structure with （h00） orientation is the major phase （〉98%） in KTN. The optical and electric measurements show that the remanent polarization and the coercive field are 9.25μC/cm^2 and 7.32kV/cm, refractive index 1.776 at incident wave length 1.2μm, thickness 968nm, and growth rate 0.027 nm per pulse. The Current-Voltage characteristics found are Ohmic at lower fields and space-charge-limited at higher fields. This phenomenon was reasonably explained by SCLC theory. The leakage current is lower than 250μA/mm^2 at 0-5V, which shows the film has good electric performances. The results of the frequency dependence of dielectric constant demonstrate that the dispersion of electric capacity is large at low frequency but small at high frequency. The dielectric constant is 12600 and the loss tangent is 0.04 at the frequency of 10 kHz.
出处
《无机材料学报》
SCIE
EI
CAS
CSCD
北大核心
2005年第5期1222-1228,共7页
Journal of Inorganic Materials
