摘要
本研究利用一台新型的超高真空气相外延（ＣＶＤ）设备，成功地在树底温度为５５０℃的（１００）硅片上由硅烷热解法生长了外延层，实现了极低温低压外延新工艺．高分辨率的横断面透射电镜（ＸＴＥＭ）照片表明，低温硅外延层中缺陷明显有其特点，而绝大部分的缺陷都由衬底表面引起的，然后传播进入外延层．
Abstract Silicon epitaxial layers were grown at temperatures ranging from 550℃ to 650℃ by normal thermal decomposition of siliane in a new ultrahigh vacuum/chemical vapor deposition reactor. Ultrahigh resolution cross sectional transmission electron microscopy shows that defects in the low temperature epitaxial silicon have obviously their features. Most of them originated at interface, then transferred from interface into epitaxial layer. In this paper, the features and formation mechanism of defects in the low temperature epitaxial silicon are analysed and discussed.
