摘要
本文报道了一种简便有效的多孔硅（ＰＳ）后处理新方法，即在（ＮＨ４）２Ｓ／Ｃ２Ｈ５ＯＨ溶液中浸泡ＰＳ，并用紫外光辐照激发．后处理ＰＳ的光致发光（ＰＬ）强度约为未经处理的５倍；样品处理后的ＰＬ峰值９０ｍｉｎ内随激光连续激发时，在大气中呈现先指数衰减后线性增长，在真空（约１Ｐａ）中却呈现一直衰减到一个稳定值的新特点．通过样品的傅里叶变换红外吸收（ＦＴＩＲ）谱的测试与分析，表明后处理在样品表面产生了ＳｉＨ（Ｏ３）。
Abstract A novel, simple and effective post treatment technique of Porous Silicon(PS),immersing PS in the (NH 4) 2S/C 2H 5OH solution illuminated under the ultraviolet light,is reported. Compared with the as etched PS,the PL intensity of the post treated sample is 5 times stronger, and there is no redshift or blueshfit of the PL peak. Moreover,during the illumination of the laser light,the PL intensity at the peak position decays exponentially at first for several minutes and then linearly rises in atmosphere, while it decays all the way and finally reaches a stable value in vacuum. FTIR spectrum indicates that the SiH(O 3),Si-O-Si and Si 3N 4 cover the treated sample surface and form good passivation films.
基金
国家自然科学基金
