摘要
对多孔硅在NH3和O2 中进行后处理的结果表明 ,SiH(O3) ,SiH (SiO2 ) ,SiH2 (O2 ) ,Si(NH) 2 和Si3N4
Porous silicon is treated in NH 3 and O 2 gas by means of passivation.The result shows that the formation of SiH(O 3),SiH(SiO 2),SiH 2(O 2),Si(NH) 2 and Si 3N 4 structure is the cause of the stabilization of the photoluminescence from porous silicon.
出处
《半导体光电》
CAS
CSCD
北大核心
2001年第6期448-450,共3页
Semiconductor Optoelectronics
关键词
多孔硅
钝化
光致发光
氢
氧
porous silicon
passivation
photoluminescence
