摘要
通过改变电化学腐蚀生成多孔硅膜的工艺条件，研究了它的发光峰形状的变化．第一次从实验上观测到多孔硅膜的针形发光激发谱和发射光谱，其半峰值宽度均小于１０ｕｍ．讨论了形成计形峰的可能机理．
Abstract The variations of PLE and PL peak-shape of PS (Porous Silicon) Film with the elcetrochemical conditions to form PS film have been investigated. We have observed experimentally at first needle PLE and PL peaks, with FWHM less than 10urn. The mechanism of occuring needle peaks has been discussed.
