摘要
Five-period AlGaSb/GaSb multiple quantum wells（MQW） are grown on a GaSb buffer.Through optimizing the AlSb nucleation layer,the low threading dislocation density of the MQW is found to be（2.50±0.91）×10~8 cm^（-2） in 1-μm GaSb buffer,as determined by plan-view transmission election microscopy（TEM） images.High resolution TEM clearly shows the presence of 90°misfit dislocations with an average spacing of 5.4 nm at the AlSb/GaAs interface,which effectively relieve most of the strain energy.In the temperature range from T = 26 K to 300 K,photoluminescence of the MQW is dominated by the ground state electron to ground state heavy hole（el-hhl） transition, while a high energy shoulder clearly seen at T76 K can be attributed to the ground state electron to ground state light hole（el-lhl） transition.
Five-period AlGaSb/GaSb multiple quantum wells（MQW） are grown on a GaSb buffer.Through optimizing the AlSb nucleation layer,the low threading dislocation density of the MQW is found to be（2.50±0.91）×10~8 cm^（-2） in 1-μm GaSb buffer,as determined by plan-view transmission election microscopy（TEM） images.High resolution TEM clearly shows the presence of 90°misfit dislocations with an average spacing of 5.4 nm at the AlSb/GaAs interface,which effectively relieve most of the strain energy.In the temperature range from T = 26 K to 300 K,photoluminescence of the MQW is dominated by the ground state electron to ground state heavy hole（el-hhl） transition, while a high energy shoulder clearly seen at T76 K can be attributed to the ground state electron to ground state light hole（el-lhl） transition.
基金
supported by the National Natural Science Foundation of China(No.50572120)
the National High Technology Research and Development Program of China(No.2009AA033101)
the State Key Development for Basic Research of China(No.2010CB327501).
