摘要
采用固相反应法在不同烧结温度(1080～1160℃)下制备了CaCu3Ti4+xO12(x=0,0.01,0.03和0.05)陶瓷,研究了烧结温度对富钛陶瓷相结构和电学性能的影响。结果表明:1080～1140℃烧结的样品均为单一的CaCu3Ti4O12相。1120℃和1140℃烧结样品的相对密度相近,约95%,在50Hz～10MHz,介电频谱中均出现tanδ峰,且从1120℃的105Hz变化到1140℃的103Hz处。运用内部阻挡层电容模型和Maxwell-Wagner模型可以解释该现象。
The CaCu3Ti4＋xO12 （x = 0, 0.01, 0.03 and 0.05） ceramics were prepared by solid-state reaction method at different sintering temperatures range from 1 080 ℃ to 1 160 ℃. Effects of the sintering temperature on the phase structures and electrical properties of Ti-rich ceramics were also studied. The results show that the ceramic samples possess single-phase CaCu3Ti4O12 sintered at 1 080-1 140 ℃. The relative densities of ceramic samples sintered at 1 120 ℃ or 1 140 ℃ are about 95%, and dielectric loss peaks all appear in their dielectric frequency patterns at 50 Hz-10 MHz, and shift from 105 Hz to 103 Hz as the sintering temperature changes from 1120 ℃ to 1140 ℃. The internal barrier layer capacitance model and the Maxwell-Wagner model can be used to explain these phenomenons.
出处
《电子元件与材料》
CAS
CSCD
北大核心
2009年第5期54-57,共4页
Electronic Components And Materials
