摘要
利用调节基底表面碳流量的方法促进了热丝ＣＶＤ中硬质合金ＹＧ８上金刚石薄膜的成核，使成核期大为缩短，根据扫描电镜和拉曼光谱对沉积结果的分析，研究了ＹＧ８上金刚石薄膜成核的机理。
By means of adjustment of carbon flux, nucleation of diamond films on carbide substrate YG8 was realized in 30 min by hot filament chemical vapor deposition, the nucleation period was shortened more than 10 times. The deposited samples were analysised by SEM and Raman spectra, and nucleation process of diamond films was also investigated.
出处
《材料科学与工程》
CSCD
1998年第1期41-42,12,共3页
Materials Science and Engineering
关键词
化学气相沉积
金刚石薄膜
成核
硬质合金
Chemical vapor deposition, Diamond films,Nucleation, Carbide.
