摘要
受益于快速发展的硅片工艺,IGBT硅片和二极管硅片的性能得到了显著提高并且日趋接近其理论极限。三菱电机通过采用新的硅片技术,已经可以进一步降低功率器件的功率损耗。这里介绍了该新硅片技术中的微细图形工艺和优化杂质分布后新的硅片结构。
Benefiting from the rapid process development,the performance of the latest silicon power devices such as IGBT and the performance of pin diode have been significantly improved and are approac＇hing to their theoretical limits.Recently, a further reduction in the power loss of these power devices is achieved by applying new technologies.The application of finer patterning process and the new design of device structures with optimising the impurity profile are described.
出处
《电力电子技术》
CSCD
北大核心
2008年第10期75-77,共3页
Power Electronics
