摘要
利用化学气相淀积方法,在载玻片上淀积二氧化锡薄膜,研究了过程的动力学特征,考察了不同操作参数对淀积速率的影响。建立了淀积速率与反应气体分压的关系式,并初步提出了淀积过程的反应原理。
Thin SnO_3 films are deposited on glass substrate by chemical vapor deposition method. The present work studies the kinetic character of the process, investigates the effect of operation conditions on the deposition rate, sets up relations between the deposition rate and the partial pressure of SnCl_4, and proposes the reaction mechanism of the deposition process.
基金
国家自然科学基金
编号 2870342
关键词
二氧化锡
薄膜
化学气相淀积
chemical vapor deposition
tin oxide
thin film
kinetics
