摘要
采用射频等离子体增强化学气相沉积法(RF-PECVD)在钢衬底上沉积氮化硅薄膜。用台阶仪、X射线光电子能谱(XPS)、透射电镜(TEM)和扫描电镜(SEM)等手段对薄膜的厚度、成分、结构及形貌进行表征,并探讨了各工艺参数对薄膜沉积速率的影响。
Silicon nitride thin films were prepared onto steel substrates by radio-frequency plasma enhanced chemical vapor deposition （RF-PECVD） technique. Thickness, component, structure and morphology of the films were characterized with surface profiler, X-ray photoelectron spectroscopy （XPS）, transmission electron microscopy （TEM） and scanning electron microscopy （SEM）, etc. And the effect of the process parameters on deposition rate was also studied.
出处
《功能材料》
EI
CAS
CSCD
北大核心
2008年第3期417-419,共3页
Journal of Functional Materials
基金
国家自然科学基金资助项目(50442025)
先进纺织材料与制备技术教育部重点实验室优秀青年人才培养基金资助项目(2006QN06)
