摘要
提出了一种改善npn和横向pnp晶体管放大倍数、扩散致窄电阻(受EB和CB结结深影响的基区电阻)阻值而又不影响其他器件特性的方法。不连续的SiOx可以作为宽禁带半导体材料加在多晶硅和单晶硅的界面处来提高横向pnp晶体管的放大倍数,使其从目前的23提高到30;连续的SiOx作为优秀的绝缘材料覆盖在发射极多晶硅表面,可以确保As在快速热处理后的分布,结果表明npn型晶体管的放大倍数从170降低到110的同时增加了扩散致窄电阻的阻值。这种方法的优点在于利用了极易制造的SiOx改善了半导体器件特性,具有极高的实际应用价值。
A way to improve the gain of npn and lateral pnp transistors was presented, the value of pinch resistor （a base resistor adjusted by EB and CB junction） has no influence on other devices. Non-continuous SiOx, a wide hand gap semiconductor material, was inserted between base poly and Si to improve the gain of lateral pnp, and results show that lateral pnp gain is enhanced from 23 to 30. Continuous SiOx, an excellent insulation material, was added to the surface of emitter to ensure the distribution of As after anneal, and results show that the gain of npn is reduced from 170 to 110 and pinch resistor value is increased. The advantage of this method is that it uses the easily made material SiOx to improve the device characteristics, it has high practical application value.
出处
《半导体技术》
CAS
CSCD
北大核心
2008年第2期144-146,共3页
Semiconductor Technology
