摘要
用直流方法测量双极器件的基区电阻是一种简单易行的方法。本文比较研究了常用的三种测量方法，通过反面实例，说明根据Ｉ－Ｖ特性提取Ｒｂ和基于碰撞离子产生的反向基区电流ｄｃ法有一定的局限性，而双基极引线孔法可克服它们的一些固有缺陷。
Three methods for dc measurement of the base resistance RB are described in the paperLimitations of two methods,extraction of RB and RE from IV curves and dc measurement based on reverse base current induced by impact ions,are illustratedIt is pointed out that the third method,double base contacts,is a method worth trying
出处
《微电子学》
CAS
CSCD
北大核心
1997年第6期395-397,共3页
Microelectronics
关键词
半导体器件
双极器件
物理分析
直流测量
Semiconductor device,Bipolar transistor,Physical analysis,DC measurement,Parameter extraction
