摘要
采用脉冲激光沉积技术在不同温度和氧分压下,在(100)Si片和抛光石英片上生长了一系列(200)面择优取向的Nd:LuVO4 薄膜。利用X射线衍射分析了所制备薄膜的成膜情况,认为成膜较为适宜的温度为700℃,氧分压为10Pa。用棱镜耦合法测得了该薄膜的有效折射率为2. 0452。利用扫描电镜(SEM)观察了Nd:LuVO4 薄膜的表面形貌。
The (200) dominated Nd:LuVO4 films were successfully fabricated on (100) Si and polished SiO2 under different temperatures of substrates and different oxygen pressures. By XRD, it is shown that a film with good crystallization was deposited at about 700°C and 10 Pa. The effective refractive index is 2.0452, which was measured by prism coupler method. The surface morphology of Nd:LuVO4 films was observed by SEM.
出处
《人工晶体学报》
EI
CAS
CSCD
北大核心
2005年第2期219-223,共5页
Journal of Synthetic Crystals
