摘要
选用V2O5为前驱物,通过在玻璃片上镀膜,利用高纯氢和高纯氮作为气源,采用微波等离子体增强法,在低温条件下合成了具有优良热致相变特性的氮杂二氧化钒(VO2-xNy)薄膜。通过正交试验设计对制备VO2薄膜过程中的主要影响因素(反应时间、反应压力、反应功率和N2/H2流量比)进行了分析研究。试验结果表明,VO2薄膜的最终的相变温度明显受到反应时间、反应压力、反应功率和N2/H2流量比的影响。其中以反应时间影响作用最为显著。经分析得到使VO2薄膜具有最低相变温度的优化工艺为:反应时间为7 min,反应压力为1.5 kPa,反应功率为100 W,N2/H2流量比为5/20(mL/min)。文中对试验结果进行了简单讨论。
Using the mixture ambience of high precursor, VO2-x Ny thin films with good thermal pure hydrogen and high pure nitrogen as induced phase transition property were synthesized at low temperature by microwave plasma enhanced route using V2O3 as molecular precursors through coating film in glass slice. The main preparation parameters for producing VO2-,Ny thin films were studied by orthogonal experimental design. It was found that reaction time,reaction pressure,reaction power and the flow rate of N2/H2 showed strong effects on the TCR of VO2-xNy thin films, the strongest effect on the TCR of VO2-xNy thin films was the reaction time. The best preparation parameters to obtain the lowest phase transitions temperature were：the reaction time was 7 min,the reaction pressure was 1.5 kPa,the reaction power was 100 W, and the flow rate of N2/H2 was 5/20（mL/min）. The results are also discussed briefly.
出处
《半导体光电》
CAS
CSCD
北大核心
2007年第4期512-515,共4页
Semiconductor Optoelectronics
基金
湖北省自然科学基金项目(2005ABA024)
湖北省科技厅重大攻关项目(2006AA101C45)
