摘要
给出了具有相同电阻率的n－Ge样品经高温热处理后的霍尔系数和电阻率的实验结果，用热缺陷补偿及反型层[1]模型对常温反常霍尔效应进行了定性解释，进一步证实了反型居理论在常温区的正确性。
The experimental results are given onHall coefficient and resistivity of n-Gesamples With the same resistivity after high tomperature heat treatment, the anomalous Halleffectin normal temperature range is interpreted by thermal defect compensation and inversionlayers model, the property is proved Which inversion layers structure in normal temperature.
出处
《黑龙江大学自然科学学报》
CAS
1997年第1期75-77,共3页
Journal of Natural Science of Heilongjiang University
关键词
电阻率
霍尔效应
热处理
半导体
锗
Resistivity, Hall effect, Haet treatment
Thermal defect, p-n junction, Inversion layers model
