摘要
通过直流暗电导率温度依赖关糸σ(T)和光吸收谱的测量,研究了退火降温速率对掺杂a—Si∶H薄膜中热缺陷的影响.
The temperature dependence of the dc dark conductivity and spectral dependence of the absorption coefficient were measured.We haveinvestigated the effect of different cooling rates after annealing uponthe thermal defect of doped a-Si:H films.
出处
《兰州大学学报（自然科学版）》
CAS
CSCD
北大核心
1992年第1期43-46,共4页
Journal of Lanzhou University(Natural Sciences)
关键词
掺杂
氢化非晶硅
热缺陷
冷却速率
doped hydrogenated amorphous silicon
cooling rate
thermal defect
light-absorbed spectrum
