摘要
经研究发现在很低温度下,随着温度的降低,MOSFET的阈电压上升;阈电压的温度梯度减小;跨导急剧上升。这表明,MOSFET在很低温度下的特性更好。
We discover that as the temperature drops, the absolute value of MOSFET threshold voltage increases, and its temperature gradient absolute value decreases, transconductance suddenly increases. The results show that MOSFET are muchsuitable for opration in cryogenic temperature.
出处
《微电子学与计算机》
CSCD
北大核心
1992年第5期44-47,共4页
Microelectronics & Computer
关键词
场效应晶体管
MOSFET
MOSFET, Threshold voltage, Transconductance
