摘要
比较了注F后900℃ N_2退火30分钟和950℃ N_2退火10分钟两种退火方式制作的P沟MOSFET和N沟MOSFET的电离辐照行为。结果发现,注F后900℃ N_2退火30分钟具有较强的抑制辐射感生氧化物电荷和界面态增长的能力。用退火工艺影响栅介质中缺陷的消除模型对实验结果进行了讨论。
The ionizing irradiation behaviours of P-channel and N-channel F-irnplanted MOSFETs with annealing conditions in N2 at 900'C for 30 minutes and at 950 C for 10 minutes have been compared. The results have shown that the MOSFETs with former annealing condition have stronger abilites of restraining ra-diation-induced oxide charges and interface states. The experimental results have
been explained by a model——the postimplantation annealing conditions affecting
the elimination of defects in gate oxides.
出处
《固体电子学研究与进展》
CAS
CSCD
北大核心
1993年第1期45-49,共5页
Research & Progress of SSE
关键词
氧化物
电离辐射
退火
工艺
MOSFET
Interface States, Oxide Charges, Threshold Voltage, MOSFET,Ids-Vgs Curves,Ionizing Radiation
