摘要
本文从yau的模型出发,推导出了短沟道硅栅MOSFET的阈电压表达式及阈电压与温度的关系:并考虑短沟道MOSFET的扩散电流。推导出简单的电流—电压关系表达式,求出了跨导;得到了与试验一致的结果。发现,随温度的降低,MOSFET的阈电压的大小上升,阈电压的温度梯度的大小减小,跨导的大小急剧上升。结果表明,MOSFET更适合低温下工作。
Expressions of threshold voltage of short channel silicon gate MOS-FET and the temperature dependence of threshold voltage were derived from Yaus model. By consideration of diffusion current of short channel MOSFET, a brief expression of current voltage dependence was derived and transeonductance was obtained. The results are in good agreement with experiment. We found that as temperature drops, absolute value of MOSFET threshold valtage increases, absolute value of threshold voltage temperature gradient decreases and transconduetance increases steeply. Results show that MOSFET are much suitable for operations in cryogenic temperature.
出处
《辽宁大学学报（自然科学版）》
CAS
1992年第4期34-44,共11页
Journal of Liaoning University：Natural Sciences Edition
关键词
MOS器件
阈电压
跨导
Metal—oxide—scmiconductor field effect transistor, Threshold voltage, Transconductance, Temperature characteristic.
