摘要
介绍了ICP刻蚀工艺技术原理和在化合物半导体器件制备中的应用,包括ICP刻蚀技术中的低温等离子体的形成机理、等离子体与固体表面的相互作用等,并对影响ICP刻蚀结果的因素进行了分析。研究了不同的工艺气体配比、腔体工作压力、ICP源功率和射频源功率对刻蚀的影响,并初步得到了一种稳定、刻蚀表面清洁光滑、图形轮廓良好、均匀性较好和刻蚀速率较高的干法刻蚀工艺。
The principle of ICP etching process technique and the applications in the fabrication of compound semiconductor device were introduced. The mechanism of low temperature plasma and the reciprocity between plasma and the surface of solid in the ICP etching technique were generalized. The factors that influenced ICP etching function were analyzed. The influences of etching gas ratio, chamber pressure, ICP power and RF power on etching pattern were investigated. A stable dry etch technique was obtained with clean and smooth etch surface, good pattern profile, good uniformity and high etch rate.
出处
《半导体技术》
CAS
CSCD
北大核心
2007年第6期474-477,485,共5页
Semiconductor Technology
