摘要
随着InSb红外焦平面探测器的发展,焦平面阵列规模越来越大,像元面积越来越小。湿法刻蚀因其各向同性的特点,导致像元钻蚀严重,越来越难满足大规格InSb焦平面器件的要求。研究了以Ar/CH4/H2作为刻蚀气体,利用电感耦合等离子体(ICP)刻蚀大规格InSb晶片的初步研究结果,研究不同RF功率、腔体压力和Ar的含量对刻蚀速率、表面形貌的影响及InSb表面残留聚合物的去除方法。
As the development of InSb FPA detectors, the wet etching have not been able to meet the requirements of continuously scaling down the pixel area for large formation and high density InSb FPAs, because the isotropic of wet etching results in cross-etching. The inductive couple plasmas etching of InSb was performed by Ar/CH4/H2. The effects of process parameters Rf bias, reaction chamber press, and Ar content on etch rate and morphology are discussed. And also the removal way have been discussed in this paper.
出处
《红外技术》
CSCD
北大核心
2012年第3期151-154,共4页
Infrared Technology
