摘要
对比研究了SiC材料在CF4+O2混合气体中的ICP刻蚀和RIE刻蚀,获得了刻蚀速率、刻蚀表面粗糙度随刻蚀功率、偏置功率、工作真空、氧含量等工艺条件的变化规律,研究结果表明,通过牺牲一定的刻蚀速率可以获得原子量级的刻蚀表面粗糙度,能够满足SiC微波功率器件研制的要求。
The shallow etching technologies of SiC material by inductively coupled plasma （ICP） and by reactive ion etching （RIE） in a mixture of CF4 ＋ O2 were experimentally studied. The impacts of etching conditions, including the etching power, bias Voltage, etching gases flow rate and oxygen partial pressure, on the etching rate and surface mnghness of the etched SiC material were evaluated. The microstructures of the etched SiC surfaces were characterized with atomic force microscopy （AFM）. The results show that the etching rate strongly affects the surface flamess. When it comes to the device grade SiC material, a compromise of the etching rate results in a mot-mean-square mnghness at atomic scale of the etched surfaces.
出处
《真空科学与技术学报》
EI
CAS
CSCD
北大核心
2009年第4期440-443,共4页
Chinese Journal of Vacuum Science and Technology
基金
国家部委预研项目(No.51308030201)
预研基金重点项目(No.9140A08050509DZ0106)
