摘要
本文研究硅片上与光刻工艺相关的尘粒（缺陷）的粒径分布，分析缺陷粒径分布的分形特征，利用缺陷粒径的分布函数得到缺陷粒径体系的分维数，建立缺陷粒径分布的分形模型，同时给出此模型所得参数的物理意义．最后，本文对缺陷粒径变化过程给出了新的动力学模型，并对此进行分析和讨论．揭示光刻缺陷的粒径分布及其动力学成因，为集成电路可制造性设计及功能成品率的精细表征开辟了一条新径．
Based on the defect size distributions on the silicon wafer, the fractal feature of the point defect distribution is analysed and the fractal model of describing the defect size distribu-nons is obtained by means of the system of the fractional dimension. This model has physical meaning clearly. A new dynamical model of expressing the change of defect size is given and discussed. The model can obtain defect characteristics which are necessary for accurate functional yield prediction during design for manufacturability of IC's.
出处
《电子学报》
EI
CAS
CSCD
北大核心
1997年第2期73-75,共3页
Acta Electronica Sinica
基金
国家863项目
国家教委博士点基金
