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基于离散模型的IC可靠性与成品率关系 被引量:1

Relation Between Reliability and Yield of IC′s Based on Discrete Model
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摘要 集成电路的可靠性和成品率是制约半导体制造发展的两个主要因素 .如何表征可靠性和成品率之间的关系是一个非常重要的问题 .本文利用一种离散的成品率模型导出了二者的关系式 ,该关系式不仅考虑了线宽、线间距等版图的几何信息同时还考虑了与工艺有关的缺陷粒径分布等参数 .通过模拟实验给出了该模型的有效性验证 . Yield and reliability are two important factors affecting the development of semiconductor manufacturing. It is an important problem how to express the relation between yield and reliability. A discrete yield model is given between yield and reliability, with many factors considered in this model, such as the line width, the spacing between the lines as well as the distribution of the defect size and so on. Finally, the validity of this model is shown by simulation.
出处 《电子学报》 EI CAS CSCD 北大核心 2001年第11期1515-1518,共4页 Acta Electronica Sinica
基金 国家"九五"科技攻关项目 (No .96 738 0 1 0 3 1 0 ) 国防科技基金(No.8.5 .3 .4)
关键词 可靠性 成品率 离散模型 集成电路 Computer simulation Mathematical models Reliability Semiconductor device manufacture
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参考文献2

  • 1Taeho Kim,IEEE Trans Semiconductor Manufacturing,1999年,12卷,4期,485页
  • 2郝跃,集成电路制造动力学理论与方法,1995年,93页

同被引文献8

  • 1Quyang C H,Pleskacz W A,Maly W.Extraction of criticalareas for opens in large VLSI circuits.IEEE International Workshop on Defect and Fault Tolerance in VLSI System,1996,21
  • 2Maly W,Strojwas A J,Director S W.Fabrication based statistical design of monolithic IC's.In:Proceeding of the IEEE International Symposium on Circuits and Systems,1981,135
  • 3Jiang Tao,Cheung N W,Hu Chenming.An electromigration failure model for interconnects under pulse and bidirectional current string.IEEE Trans Electron Devices,1993,41(4):539
  • 4Jiang Tao,Cheung N W,Hu Chenming.Metal electromi-gration damage healing under bidirectional current stress.IEEE Electron Deviece Lett,1993,14:554
  • 5Allan G A,Walton A J.Critical area extration of soft fault estimation.IEEE Trans Semicond Manuf,1998,11(1):146
  • 6Pleskacz W A,Quyang C H,Maly W.A DRC-based algo-rithm for extraction of critical areas for opens in large VLSI circuits.IEEE Trans Comput-Aided Des Integrated Circuits and Systems,1999,18(2):151
  • 7马佩军,郝跃,寇芸.一种改进的VLSI关键面积计算模型和方法[J].Journal of Semiconductors,2001,22(9):1212-1216. 被引量:2
  • 8陈太峰,郝跃,赵天绪,张进城.基于缺陷统计分布的IC互连线可靠性模型[J].Journal of Semiconductors,2001,22(10):1343-1345. 被引量:1

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