摘要
栅极增强等离子体源离子注入(GEPSII)一种新的金属管件内壁处理方法,该方法能够均匀地对金属管件内壁进行离子注入,并且能够生成二元金属化合物.在金属管件内轴向放置三块45号钢样品,利用GEPSII方法在金属管件内壁成功生长金黄色氮化钛(TiN)薄膜.结构分析显示TiN主要沿(111)和(200)晶面生长,深度分析显示膜的厚度大约二十几纳米,膜质地均匀且在基底有一定的嵌入深度.电化学腐蚀、硬度、磨擦学分析表明TiN薄膜很好地改善了45号钢的表面性能,并且表现出很高的轴向均匀性.
As a novel inner surface processing method, grid enhanced plasma source ion implantation （GEPSII） method can realize uniform inner surface ion implantation of a metal tube and metal binary compound can be produced. In the experiment, three 0.45% carbon steel （45-steel） work pieces were axially put on the inner surface of the tube, and golden titanium nitride （TIN） films were produced on the work pieces by GPSII. Structure analysis shows that the TiN films have the preferred crystal faces （111） and （200）, and the depth of the films is about 20 nm with partial embedding in the substrate. Analysis on the electrochemistry corrosion, hardness and friction of the work pieces indicates that the surface property of the 45-steel has been greatly improved by the protective TiN film, and very good axial uniformity has been obtained.
出处
《物理学报》
SCIE
EI
CAS
CSCD
北大核心
2007年第3期1461-1466,共6页
Acta Physica Sinica
基金
国家自然科学基金(批准号:50071068
10275088)
国家863计划(批准号:2002A331020)
北京市科委高新科技发展项目(批准号:H020420160130)
美国ARO-FE基金(批准号:N62649-02-1-0010)资助的课题.~~
