摘要
分别对带隙较宽(较窄)的p型材料在带隙较窄(较宽)的n型材料之上的碲镉汞(MCT)异质结的能带结构进行了理论分析.在应用的理论模型中提出了一个简单的载流子浓度近似模型用于计入载流子简并效应和导带非抛物线性,同时还考虑到了价带失配的影响.就p-n结位置(zB)和界面电荷密度(Q)两个参数对MCT异质结能带结构的影响进行了系统分析,发现这些影响是不可忽略的.根据这些影响特征,进一步得出了zB和Q参数之间的优化设计规律.
In this paper, the band profiles of HgCdTe （MCT） heterojunctions with the configuration of wide/narrow gap-p on narrow/ wide gap-n are calculated, respectively. In the theoretical model employing a valence band offset, a new simple carrier density approximation is proposed to include the carrier degeneracy and conduction band non-parabolicity in the calculations. The effects of the location of p-n junction （zB） and the interface charge density （Q） on the band profiles of MCT heterojunctions are studied systemically, which is found to be significant and can＇t be neglected. With the help of the results of above research, the optimal design related to zB and Q is obtained.
出处
《物理学报》
SCIE
EI
CAS
CSCD
北大核心
2006年第7期3611-3616,共6页
Acta Physica Sinica
基金
国家重点基础研究专项基金(批准号:2004CB619004
2001CB309302)
国家自然科学基金(批准号:60476031
10234040
60244002)资助的课题.~~
