摘要
通过在P HgCdTe上生长阳极硫化膜和ZnS介质钝化层 ,制备出了性能较好的MIS器件 ,并通过对MIS器件C V特性的分析 ,获得了ZnS/自身钝化膜 /P HgCdTe的界面特性。所测的界面电荷密度在 10 10 ～ 10 11cm- 2 之间 ,平带电压在
In this study ,We report the growth of the sulfide film and the ZnS film on the top of P HgCdTe and achieved a better HgCdTe MIS device. The C V characterization of the MIS device also was investigated. From the result of the C V character analysis, We arrived the character of the interface of ZnS/sulfide/P HgCdTe, The interface charge concentration was between 10 10 and 10 11 /cm 2, and VFB was below 2 V.
出处
《红外技术》
CSCD
北大核心
2002年第5期42-45,共4页
Infrared Technology
