摘要
在中波响应波段的p型Hg0 70 9Cd0 2 91 Te(MCT)分子束外延生长薄膜上 ,利用材料芯片技术获得叠加注入不同硼离子剂量的系列大光敏元面积 (5 0 0 μm× 5 0 0 μm)的n_op_p结 .通过测量液氮温度下不同离子注入剂量单元的电流 电压特性和对零偏微分电阻R0 分析 ,观测到p_n结的性能与硼离子注入剂量明显的依赖关系 .在另一片薄膜材料(镉组分值为 0 2 74 3)上通过该方法获得R0
Using the material chip technology,large area photodiodes of n-on-p structure with different boron implantation dose are fabricated on the Hg 1-xCd xTe film for mid-infrared wavelength region(x=0.291).Current-voltage characteristics of the photodiodes are measured at 77K and zero bias resistance-area products of different photodiodes are fitted from the data in the voltage range of -0.2—0.08V.The study indicated that the R 0A products of different elements depended distinctly upon the implanted boron dose.A large R 0 value has also obtained in another chip with x=0.2743.All the samples in this study are grown by Riber 32P molecular-beam epitaxy system and all the junctions-forming process is same to the standard planar technology but using a series of metallic masks during the boron ion implantation.
出处
《物理学报》
SCIE
EI
CAS
CSCD
北大核心
2004年第3期911-914,共4页
Acta Physica Sinica
基金
国家自然科学基金 (批准号 :10 0 740 68和 60 2 44 0 0 2 )
国家重点基础研究项目 (批准号 :G19980 614 0 4)资助的课题~~
