摘要
介绍了一种用于抗闭锁的辐射敏感开关。设计的辐射敏感开关在“闪光I”瞬时辐射模拟源上进行了实验考核。实验结果表明,该辐射敏感开关能够成功驱动超大规模集成电路,达到抗闭锁设计目的。
The design procedure of a radiation sensitive switch for prevention of latchup is described in detail The radiation sensitive switch designed was tested on a transiental radiation simulation device. The experimental results show that the radiation sensitive switch is capable of driving very large scale integrated circuits （VLSI） successfully and achieving the goal of latchup prevention.
出处
《微电子学》
CAS
CSCD
北大核心
2005年第6期581-583,共3页
Microelectronics
关键词
抗闭锁
辐射敏感开关
集成电路
Latchup prevention
Radiation sensitive switch
Integrated circuit
