摘要
用射频等离子增强化学气相沉积方法（RF—PECVD）制备磷掺杂氢化非晶硅（a—Si：H）薄膜，研究了辉光放电气体压强（20-80Pa）对薄膜的暗电导率、电导激活能以及电阻温度系数的影响；利用激光喇曼光谱研究了气体压强对a—Si：H薄膜微结构的影响，并与薄膜的电学性能进行了综合讨论。结果表明：随着辉光放电气体压强的增加，a-Si：H薄膜的暗电导逐步减小，但电导激活能和电阻温度系数都有不同程度的增大；同时，薄膜内非晶网络的短程和中程有序程度逐渐恶化。
Phosphor doped hydrogenated amorphous silicon （a-Si ： H） thin films were fabricated by radio frequency plasma enhanced chemical vapor deposition （RF-PECVD）. The dark conductivity, activation energy and temperature Coefficient of resistance of the films were investigated with varying gas pressures from 20 Pa to 80 Pa. The microstructure changes of the a- Si ： H thin films caused by different gas pressures were studied by means of Raman technique. The results show that TCR and activation energy of the a-Si ： H thin films increase with the rise of gas pressure, while the dark conductivity decreases. In the mean time, the ordering of amorphous network of the testing thin films on the short and intermediate scales is getting worse as the gas pressure goes up.
出处
《半导体光电》
CAS
CSCD
北大核心
2009年第4期550-554,共5页
Semiconductor Optoelectronics
基金
部级基金资助项目(06DZ02)
