摘要
在ＭＯＳ电容器的基础上提出了一种新型的电容器，它是由金属－非晶态半导体－氧化物－半导体４层结构组成的电容器，简称为ＭＳＯＳ电容器，用Ｃ－Ｖ仪画出了它的Ｃ－Ｖ特性曲线；并用能带模型对此特性进行了分析，该电容器的特性是通过控制外加电压Ｖ，可以改变其电容量Ｃ，且在Ｖ＝０值附近出现峰值Ｃｍａｘ．
On the bases of MOS capacitor this paper has presented a kind of new capacitor with four layer structures which consists of Metal-Semiconductor-Oxide-Semiconductor, for short as MSOS capacitor; and we have drawn its C-V characteristic curve by C-V plotter;and we have analysed its C-V characteristic by energy band model. The capacitor has some characteristic that can change its capacitance C by control to applied voltage V, and the capacitance C has a peak Cmax near by V=0. The capacitor with this a characeristic was not found in literature.
出处
《中南民族学院学报（自然科学版）》
1996年第1期7-11,共5页
Journal of South-Central University for Nationalities(Natural Sciences)
关键词
MSOS电容器
耗尽层电容C
C-V特性
压控电容器
MSOS capacitor
depletion layer capacitance Cs
oxide layer capcacitance C,
C- V characteristic
