摘要
本文给出了描写脉冲MOS电容器的瞬态特性的微分方程.产生区宽度采用准平衡模型来计算,反型少子的非稳态产生的影响已被计及,文中给出了用Runge-Kutta方法得到的I-t和C-t瞬态特性曲线,并进行了详细讨论.
A differential equation, which describes the transients of pulsed MOS capacitors, is derived. The quasi-equilibrium model is used to estimate the width of generation region. The non-steady-state generation effect of inversion minority carriers is calcuated. Finally the I-t and C-t transients are given by using Runge-Kutte method. Their results are disscussed in detail.
出处
《杭州大学学报（自然科学版）》
CSCD
1992年第4期385-389,共5页
Journal of Hangzhou University Natural Science Edition
关键词
半导体
MOS电容器
瞬态特性
semiconductor
MOS capacitor
generation lifetime of minority carriers
