摘要
应用一维化方法和有效质量近似计算了在垂直于界面的磁场作用下量子阱内类氢杂质基态和低激发态的束缚能,并考虑到GaAs和GaAlAs中电子具有不同的有效质量和不同的介电常数,所得计算结果与实验较好相符。 量子阱;;超晶格;;GaAs;;
The binding energies of the ground state and the low-lying excited states of hydrogenic impurities
in quantum well in a vertical magnetic fielo have been calculated applying the method
of one dimensionalization and the effective mass approximation. In calculation, the effects due
to different effective masses and dielectric constants in GaAs-GaAlAs layers are included. The
results agree well with the experimental results.
