摘要
在有效质量近似下，利用一维化Ｅｕｌｅｒ方程方法计算了ＧａＡｓ－Ｇａ１－ｘＡｌｘＡｓ异质结附近类氢杂质基态及２ｐ±态束缚能及其受像势的影响．在极限情况下，我们的结果可以重现已有的精确解．
Abstract in the effective mass approximation,the method of one-dimensionalised Euler's equation is used to calculate the binding energy and the effect of the image potential on the binding energies of the ground state and the 2p states of hydrogenic impurities near a GaAs-Ga1-xAlxAs heterojunction.Our results can reappear the exact solution in the limit.
