摘要
本文主要介绍半导体器件及集成电路在各种辐射环境下的损伤失效模式,分析其失效物理机理,提出相应对策,以提高器件及电路的抗辐射能力。
The failure modes of semiconductor devices and IC's which were caused by damage in the radiation environments are presented. Their failure mechanisms are also analyzed. Effective measures are adopted to improve the radiation-resistant capacity of the semiconductor devices and IC's.
出处
《半导体情报》
1990年第5期1-8,18,共9页
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