摘要
本文论述了进一步降低晶体管低频噪声的限制,利用磷通过热生长薄氧化层扩散制成新型漂洗发射极晶体管,讨论了器件在降低进入晶体的过量磷原子、控制诱生缺陷和发射区边缘缺陷的作用。实验结果表明,漂洗发射极晶体管的小电流增益均匀性好,具有良好的低频噪声特性,是一种工艺比较简化,性能较好的低频低噪声器件。
This paper describes the restrictions of further reducing the low-frequency noise to make a new washed emitter transistor whose emitter was formed by phosphorus diffusion through a thermally grown thin oxide layer and discusses the superior features, including the reduction of extra-phosphorus atoms in the emitter region and the restrictions of induced defects as well as emitter edge defects. It is shown that the new transistor has more uniform characteristics of current gain at low current level, and an excellent low-frequency noise figure, so that it is a promising low noise device at low frequency with simpler processes.
出处
《固体电子学研究与进展》
CAS
CSCD
北大核心
1989年第2期148-154,共7页
Research & Progress of SSE
