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低噪声GaAs/AlGaAs多量子阱红外探测器 被引量:1

GaAs/AlGaAs Quantum Well Infrared Photodetector with Low Noise
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摘要 提出了一种新结构的多量子阱红外探测器(QWIP)。在常规多量子阱结构的基础上加入P型欧姆接触层,实现以小的隧道电流代替原有的大的补偿电流,从而减小器件的暗电流实现低噪声器件。对器件暗电流的理论计算与实验曲线符合的很好。制备了新结构器件,其噪声只是同结构的常规QWIP的1/3。 We present a novel structure of multi-quantum well intrared photodetector (QWIP). In the new structure device,a p-type contact layer replaced the n-type layer and on the top of the conventional structure of QWIP,and a small tunneling current replaced the large compensatory current, which made the device with low dark current and low noise characteristics. The experimental result of dark current accorded with the calculated resuit,and the noise of the new structure QWlP decreased to one third of the conventional QWIP.
机构地区 北京工业大学
出处 《光电子.激光》 EI CAS CSCD 北大核心 2005年第9期1018-1020,共3页 Journal of Optoelectronics·Laser
基金 国家"973"计划资助项目(TG2000068302)
关键词 多量子阱红外探测器(QWIP) 隧道 补偿电流 multi-quantum well infrared photodetector(QWIP) tunnel compensatory current
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参考文献8

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